Color conversion panel, manufacturing method of the same, and display device including the same

ABSTRACT

A color conversion panel includes a substrate, a plurality of color conversion layers and a transmission layer on the substrate, a capping layer on the plurality of color conversion layers and the transmission layer, and a filter layer on the capping layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2015-0167429, filed in the Korean IntellectualProperty Office on Nov. 27, 2015, the entire content of which isincorporated herein by reference.

BACKGROUND

(a) Field

Aspects of embodiments of the present invention relate to a colorconversion panel, a manufacturing method thereof, and a display deviceincluding the same.

(b) Description of the Related Art

Currently, among display devices, a liquid crystal display in which afield generating electrode is provided in two display panels is mainlyused. A plurality of thin film transistors and pixel electrodes arearranged in a matrix at one display panel (hereinafter referred to as “athin film transistor array panel”), and red, green, and blue colorfilters are disposed in the other display panel (hereinafter referred toas “a common electrode panel”), an entire surface of which is covered bya common electrode.

However, the display device generates light leakage in the polarizer andthe color filter.

The above information disclosed in this Background section is forenhancement of understanding of the background of the invention andtherefore it may contain information that does not form the prior art.

SUMMARY

Aspects of embodiments of the present invention are directed to a colorconversion panel with improved (e.g., increased) contrast ratio andcolor reproducibility, and a display device including the same.

According to some embodiments of the present invention, there isprovided a color conversion panel including: a substrate; a plurality ofcolor conversion layers and a transmission layer on the substrate; acapping layer on the plurality of color conversion layers and thetransmission layer; and a filter layer on the capping layer.

In an embodiment, the capping layer covers each upper surface and eachlateral surface of the plurality of color conversion layers and thetransmission layer.

In an embodiment, the color conversion panel further includes a lightblocking member between adjacent layers of the plurality of colorconversion layers and the transmission layer.

In an embodiment, the capping layer includes an inorganic material.

In an embodiment, the capping layer includes a non-oxidizing material.

In an embodiment, the capping layer includes a silicon nitride(SiN_(x)).

In an embodiment, a thickness of the capping layer is less than about 1μm.

In an embodiment, the capping layer is formed below about 100° C.

According to some embodiments of the present invention, there isprovided a method for manufacturing a color conversion panel, the methodincluding: forming a plurality of color conversion layers on asubstrate; depositing a capping layer on the plurality of colorconversion layers; and depositing a filter layer on the capping layer,wherein the capping layer is deposited at a temperature below about 100°C.

In an embodiment, the capping layer includes an inorganic material, andwherein the deposition of the filter layer is performed in a hightemperature process.

In an embodiment, the capping layer includes a non-oxidizing material.

In an embodiment, the capping layer includes a silicon nitride(SiN_(x)).

In an embodiment, a thickness of the capping layer is less than about 1μm.

According to some embodiments of the present invention, there isprovided a display device including: a display panel; and a colorconversion panel on the display panel, wherein the color conversionpanel includes: a substrate, a plurality of color conversion layers anda transmission layer on one surface of the substrate facing toward thedisplay panel, a capping layer on one surface of the plurality of colorconversion layers and the transmission layer facing toward the displaypanel, and a filter layer between the capping layer and the displaypanel.

In an embodiment, the capping layer covers each upper surface and eachlateral surface of the plurality of color conversion layers and thetransmission layer.

In an embodiment, the display device further includes a light blockingmember between adjacent layers among the plurality of color conversionlayers and the transmission layer.

In an embodiment, the capping layer includes an inorganic material.

In an embodiment, the capping layer includes a non-oxidizing material.

In an embodiment, the capping layer includes a silicon nitride(SiN_(x)).

In an embodiment, a thickness of the capping layer is less than about 1μm.

Accordingly, the color conversion panel and the display device includingthe same, according to an exemplary embodiment of the present invention,have excellent contrast ratio and color reproducibility, therebyimproving the display quality.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a color conversion panel accordingto an exemplary embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of a display device accordingto an exemplary embodiment of the present invention.

FIG. 3 is a top plan view of a display device according to an exemplaryembodiment of the present invention; and FIG. 4 is a cross-sectionalview taken along the line IV-IV of FIG. 3.

FIG. 5 is a top plan view of one pixel of a display device according toan exemplary embodiment of the present invention; and FIG. 6 is across-sectional view taken along the line VI-VI of FIG. 5.

FIG. 7 is a cross-sectional view of a display device according to anexemplary embodiment of the present invention.

FIG. 8 is a top plan view of a plurality of pixels in an organic lightemitting diode display according to an exemplary embodiment of thepresent invention; and FIG. 9 is a cross-sectional view taken along theline IX-IX of FIG. 8.

FIG. 10 is a graph comparing degradation over operating lifetime of anexemplary embodiment of the present invention and a comparative example.

DETAILED DESCRIPTION

Aspects of embodiments of the present invention will be described morefully hereinafter with reference to the accompanying drawings, in whichexemplary embodiments of the invention are shown. As those skilled inthe art would realize, the described embodiments may be modified invarious different ways, all without departing from the spirit or scopeof the present invention.

The drawings and description are to be regarded as illustrative innature and not restrictive. Like reference numerals designate likeelements throughout the specification.

Further, in the drawings, size and thickness of each element arearbitrarily represented for better understanding and ease ofdescription, and embodiments of the present invention are not limitedthereto. In the drawings, the thickness of layers, films, panels,regions, etc., are exaggerated for clarity. In the drawings, for betterunderstanding and ease of description, the thickness of some layers andareas is exaggerated.

To realize a display device with reduced light leakage and highefficiency, aspects of embodiments of the present invention relate to adisplay device including a color conversion panel. Now, a colorconversion panel according to an exemplary embodiment of the presentinvention will be described with reference to FIG. 1. FIG. 1 is across-sectional view of a color conversion panel according to anexemplary embodiment of the present invention.

As shown in FIG. 1, a color conversion panel 30 according to anexemplary embodiment of the present invention includes a plurality ofcolor conversion layers 330R and 330G, a transmission layer 330B, and alight blocking member 320 positioned on a substrate 310.

The plurality of color conversion layers 330R and 330G may emit light bya method of converting a set or predetermined incident light into adifferent color light. As one example, the plurality of color conversionlayers 330R and 330G may be a red color conversion layer 330R and agreen color conversion layer 330G.

The transmission layer 330B may emit light by a method of transmittingthe set or predetermined incident light. The transmission layer 330B maytransmit blue light as one example.

The light blocking member 320 is positioned between the adjacent colorconversion layers 330R and 330G, and between the adjacent colorconversion layers 330B and 330G. In other words, the light blockingmember 320 may define regions in which the red color conversion layer330R, the green color conversion layer 330G, and the transmission layer330B adjacent to each other are disposed.

The red color conversion layer 330R may include phosphors (or a phosphorlayer) and/or quantum dots to convert the incident blue light into redlight.

The green color conversion layer 330G may include phosphors (or aphosphor layer) and/or quantum dots to convert the incident blue lightinto green light.

The red color conversion layer 330R and the green color conversion layer330G may further include the quantum dots for converting the color withor without the phosphor. In this case, the quantum dots may be selectedfrom a Group II-VI compound, a Group III-V compound, a Group IV-VIcompound, a Group IV element, a Group IV compound, and/or a combinationthereof.

The Group II-VI compound may be selected from the group consisting of abinary compound selected from the group consisting of CdSe, CdTe, ZnS,ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and a mixture thereof; aternary compound selected from the group consisting of CdSeS, CdSeTe,CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe,CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, anda mixture thereof; and a quaternary compound selected from the groupconsisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe,CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and a mixture thereof.

The Group III-V compound may be selected from the group consisting of abinary compound selected from the group consisting of GaN, GaP, GaAs,GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and a mixture thereof;a ternary compound selected from the group consisting of GaNP, GaNAs,GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs,InNSb, InPAs, InPSb, GaAlNP, and a mixture thereof; and a quaternarycompound selected from the group consisting of GaAlNAs, GaAlNSb,GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP,InAlNAs, InAlNSb, InAlPAs, InAlPSb, and a mixture thereof.

The Group IV-VI compound may be selected from the group consisting of abinary compound selected from the group consisting of SnS, SnSe, SnTe,PbS, PbSe, PbTe, and a mixture thereof; a ternary compound selected fromthe group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe,SnPbS, SnPbSe, SnPbTe, and a mixture thereof; and a quaternary compoundselected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and amixture thereof. The Group IV element may be selected from the groupconsisting of Si, Ge, and a mixture thereof. The Group IV compound maybe a binary compound selected from the group consisting of SiC, SiGe,and a mixture thereof.

Also, a Group III-VI compound, a Group II-III-V compound, or a GroupGroup, and combinations thereof, may be included.

The Group III-VI compound may include a compound such as GaO, the GroupII-III-V compound may include a compound such as InZnP, the Groupcompound may include a compound such as InZnSCdSe; however, embodimentsof the present invention are not limited thereto.

In this case, the binary compound, the ternary compound, or thequaternary compound may exist in particles at a uniform concentration,or may exist in the same particle divided into states whereconcentration distributions are partially different. Further, the colorconversion media layer may have a core/shell structure where one quantumdot surrounds another quantum dot. An interface between the core and theshell may have a concentration gradient, such that a concentration of anelement existing in the shell is gradually reduced nearing the centerthereof.

The quantum dot may have an emission wavelength spectrum having a fullwidth at half maximum (FWHM) of about 45 nm or less, preferably about 40nm or less, and more preferably about 30 nm or less, in which range thecolor purity or the color reproducibility may be improved (e.g.,increased). In addition, because light emitted by the quantum dot isemitted in all directions, a viewing angle of light may be improved(e.g., increased).

In addition, the quantum dot is not specifically limited to have shapesthat are generally used in the technical field related to embodiments ofthe present invention, and more specifically, may have a spherical shape(such as in a nano-particle), a pyramidal shape, a multi-arm shape, or acubic shape, or may be a nanotube, a nanowire, a nanofiber, a planarnano-particle, and/or the like.

When the red color conversion layer 330R includes the red phosphor, thered phosphor may be one material among (Ca, Sr, Ba)S, (Ca, Sr,Ba)₂Si₅N₈, CaAlSiN₃, CaMoO₄, and Eu₂Si₅N₈, although it is not limitedthereto. The red color conversion layer 330R may include at least onekind of red phosphor.

When the green color conversion layer 330G includes the green phosphor,the green phosphor may be one material among yttrium aluminum garnet(YAG), (Ca, Sr, Ba)₂SiO₄, SrGa₂S₄, BAM, α-SiAlON, β-SiAlON,Ca₃Sc₂Si₃O₁₂, Tb₃Al₅O₁₂, BaSiO₄, CaAlSiON, and (Sr_(1-x)Ba_(x))Si₂O₂N₂,although it is not limited thereto. The green color conversion layer330G may include at least one kind of green phosphor. In this case, xmay be any number between 0 and 1.

The transmission layer 330B may be a polymer material for transmittingblue light supplied from a light assembly. For example, the transmissionlayer 330B corresponding to the region for emitting the blue light emitsthe incident blue light without the additional phosphors (or phosphorlayer) or quantum dots.

The materials of the red color conversion layer 330R, the green colorconversion layer 330G, the transmission layer 330B, and the lightblocking member 320 may be photosensitive resins as one example, andaccordingly, they may be formed through a photolithography process.

Also, the red color conversion layer 330R, the green color conversionlayer 330G, the transmission layer 330B, and the light blocking member320 may be formed through the printing process, and in this case,different materials from the photosensitive resin may be used in themanufacturing process.

In some embodiments, the color conversion layers and the light blockingmember are formed through the photolithography process or the printingprocess however, embodiments of the present invention are not limitedthereto, and other methods or other materials may be used.

At least one among the plurality of color conversion layers 330R and330G and the transmission layer 330B, according to an exemplaryembodiment of the present invention, may further include a scatteringmember. For example, a plurality of color conversion layers 330R and330G and the transmission layer 330B may respectively include thescattering member, however they are not limited thereto, and thetransmission layer 330B may include the scattering member, and the redcolor conversion layer 330R and the green color conversion layer 330Gmay not include the scattering member as another exemplary embodiment.

Each scattering member scatters the light emitted from at least one ofthe phosphors (or the phosphor layer) and the quantum dots so as to emitmore light. As such, the light emission efficiency is increased.

In this case, a content of the scattering member included in the redcolor conversion layer 330R and the green color conversion layer 330G,and the content of the scattering member included in the transmissionlayer 330B may be different. The content of the scattering memberincluded in the red color conversion layer 330R and the green colorconversion layer 330G may be larger than the content of the scatteringmember included in the transmission layer 330B, as one example.

The scattering member included in the transmission layer 330B may adjustfront luminance and lateral luminance of the light emitted from thetransmission layer 330B to be uniform. Also, the scattering memberincluded in the red color conversion layer 330R and the green colorconversion layer 330G may increase the efficiency of light emission fromthe red color conversion layer 330R and the green color conversion layer330G. As described above, the scattering member included in each colorconversion layer may have different purposes, thereby being used indifferent contexts.

The material of the scattering members may be any suitable material thatevenly scatters light, such as TiO₂, ZrO₂, Al₂O₃, In₂O₃, ZnO, SnO₂,Sb₂O₃, ITO, and/or the like.

Also, the scattering member may have a refractive index of about 1.5 ormore. The color conversion layers 330R and 330G including the scatteringmembers that have this refractive index, and the transmission layer330B, may improve (e.g., increase) light emission efficiency.

Next, a capping layer 340 is positioned on the plurality of colorconversion layers 330R and 330G, the transmission layer 330B, and thelight blocking member 320. The capping layer 340 prevents orsubstantially prevents the color conversion layers 330R and 330G and thetransmission layer 330B from being damaged by high temperature processesafter forming the color conversion layers 330R and 330G and thetransmission layer 330B. In more detail, in the process after formingthe color conversion layers 330R and 330G and the transmission layer330B, the phosphors (or phosphor layer) and the quantum dots included inthe color conversion layers 330R and 330G and the transmission layer330B may be damaged or extinguished by the moisture and the hightemperature processes; however, this may be prevented or mitigatedthrough the capping layer 340.

To protect the color conversion layers 330R and 330G and thetransmission layer 330B, the capping layer 340 may be deposited to coverone exposed surface of the color conversion layers 330R and 330G and thetransmission layer 330B. In detail, the capping layer 340 may cover theupper surface and the lateral surface of the plurality of colorconversion layers 330R and 330G and the transmission layer 330B,respectively.

The capping layer 340 may be an inorganic material, such as a siliconnitride (SiN_(x)), and/or the like. However, it is not limited to thismaterial, and the capping layer 340 may be made of any suitable materialthat is a non-oxidizing and transparent material. In this case, thecapping layer 340 may be any suitable inorganic material havingtransmittance of more than about 95%.

The capping layer 340 may be formed at less than 100° C. Compared with acapping layer deposited at a high temperature, the capping layer 340 ofembodiments of the present invention deposited at a low temperature mayeffectively prevent or mitigate degradation of the color conversionlayer.

The thickness of the capping layer 340 may be less than 1 μm. Athickness of the capping layer 340 of 1 μm is sufficient to protect theplurality of color conversion layers 330R and 330G and the transmissionlayer 330B from high temperature or moisture.

A filter layer 350 is positioned on the capping layer 340. In thepresent specification, the capping layer 340 and the filter layer 350are positioned on the light blocking member 320; however, embodiments ofthe present invention are not limited thereto, and the capping layer andthe filter layer may be positioned on the color conversion layers 330Rand 330G and the transmission layer 330B, and the light blocking membermay be positioned on the filter layer, or the light blocking member maybe positioned on the capping layer and the filter layer may bepositioned on the capping layer and the light blocking member as anotherexemplary embodiment.

The filter layer 350 is a filter transmitting light of a set orpredetermined wavelength and reflecting or absorbing light except forthe light of the set or predetermined wavelength, such as aninterference filter. The filter layer 350 may be manufactured of astructure in which a plurality of films having different refractiveindexes are deposited. For example, the films may include polyethylenenaphthalate (PEN), polystyrene (PS), and/or the like.

Further, the filter layer 350 may be deposited through the hightemperature process. As one example, the deposition may be performed ata temperature from about 250° C. to about 350° C. As described above,according to the filter layer 350 deposited through the high temperatureprocess, the extinction of the quantum dots included in the colorconversion layers 330R and 330G may occur, however the capping layer 340according to an exemplary embodiment of the present invention preventsor substantially prevents or mitigates the extinction.

The filter layer 350 again directs the light emitted in the directionopposite to the direction incident on the user to the color conversionlayers 330R and 330G and the transmission layer 330B while the light isemitted or transmitted in the color conversion layers 330R and 330G andthe transmission layer 330B, thereby improving (e.g., increasing) thelight emission efficiency. In some exemplary embodiments, the filterlayer 350 may be omitted. The above-described color conversion panelprovides excellent color reproducibility and light emission efficiency.

Next, a display device according to an exemplary embodiment of thepresent invention will be described with reference to FIGS. 2, 3, and 4.FIG. 2 is a schematic cross-sectional view of a display device accordingto an exemplary embodiment of the present invention; FIG. 3 is a topplan view of a display device according to an exemplary embodiment ofthe present invention; and FIG. 4 is a cross-sectional view taken alongthe line IV-IV of FIG. 3.

First, referring to FIG. 2, the display device according to an exemplaryembodiment of the present invention will be briefly described, whereinthe display device includes a color conversion panel 30, a display panel10 in contact with color conversion panel 30, and a light assembly 500.The color conversion panel 30 according to an exemplary embodiment ofthe present invention may be the color conversion panel described withreference to FIG. 1, thus, a detailed description thereof may not berepeated. However, in this case of the color conversion panel 30, thesubstrate 310 shown in FIG. 1 may be positioned to be separated far fromthe display panel 10. The substrate 310 of the color conversion panel 30may be disposed most remotely with reference to the display panel 10.

The display panel 10 may include a liquid crystal panel for forming avertical electric field, however it is not limited thereto, and it maybe a display panel, such as a liquid crystal panel for forming ahorizontal electric field, a plasma display panel (PDP), an organiclight emitting diode display (OLED), a surface conductionelectron-emitter display (SED), a field emission display (FED), a vacuumfluorescent display (VFD), or an e-paper. Next, the display panel 10 maybe described in further detail.

The light assembly 500 may include a light source positioned under thedisplay panel 10 and generating light, and a light guide for receivingthe light and for guiding the received light in the direction of thedisplay panel 10 and the color conversion panel 30. When the displaypanel 10 is a self-emissive display device, the light assembly 500 maybe omitted.

As an example of one embodiment of the present invention, the lightassembly 500 may include at least one light emitting diode (LED), suchas a blue light emitting diode (LED). The light source according toembodiments of the present invention may be an edge-type light assemblydisposed on at least one side of the light guide plate, or may be adirect-type where the light source of the light assembly 500 ispositioned in a directly lower portion of the light guide plate;however, embodiments of the present invention are not limited thereto.

Next, the display panel 10 according to an exemplary embodiment of thepresent invention will be described in further detail with reference toFIG. 3 and FIG. 4.

The display panel 10 may include a liquid crystal panel 50 forillustrating (or displaying) an image and first and second polarizers 12and 22 on respective surfaces of the liquid crystal panel 50. The firstpolarizer 12 and the second polarizer 22 for polarization of the lightincident from the light assembly 500 are positioned at respectivesurfaces of the liquid crystal panel 50.

The polarizers 12 and 22 may be at least one of a coating polarizer anda wire grid polarizer. These polarizers 12 and 22 may be positioned atone surface of the display panel 100 and 200 by various methods, such asa film method, a coating method, an adhering method, and/or the like.However, this description is one example and embodiments of the presentinvention are not limited thereto.

The liquid crystal panel 50 includes a lower panel 100 including a thinfilm transistor to display the image, an upper panel 200 including asecond substrate 210 facing the lower panel 100, and a liquid crystallayer 3 interposed between the lower panel 100 and the upper panel 200.

A plurality of pixel electrodes are positioned in a matrix shape on afirst substrate 110 included in the lower panel 100.

A gate line 121 extending in a row direction and including a gateelectrode 124, a gate insulating layer 140 positioned on the gate line121, a semiconductor layer 154 positioned on the gate insulating layer140, a data line 171 positioned on the semiconductor layer 154,extending in a column direction, and including a source electrode 173, adrain electrode 175, a passivation layer 180 positioned on the data line171 and the drain electrode 175, and a pixel electrode 191 electricallyand physically connected to the drain electrode 175 through a contacthole 185 are positioned on the first substrate 110.

The semiconductor layer 154 positioned on the gate electrode 124 forms achannel layer in a region that is exposed by the source electrode 173and the drain electrode 175, and the gate electrode 124, thesemiconductor layer 154, the source electrode 173, and the drainelectrode 175 form one thin film transistor.

Next, the upper panel 200 will be described.

The second substrate 210 faces and is separated from the first substrate110. A light blocking member 220, a planarization layer 250, and acommon electrode 270 are positioned between the second substrate 210 andthe liquid crystal layer 3. In detail, the light blocking member 220 ispositioned at one surface of the second substrate 210 facing toward thefirst substrate 110. The planarization layer 250 is positioned at onesurface of the light blocking member 220 facing toward the firstsubstrate 110, and the planarization layer 250 may provide the flatsurface. The common electrode 270 is positioned at one surface of theplanarization layer 250 facing toward the first substrate 110. Theplanarization layer 250 may be omitted in some exemplary embodiments.

The common electrode 270 applied with a common voltage forms an electricfield with the pixel electrode 191 to arrange liquid crystal molecules31 positioned in the liquid crystal layer 3 between the common electrode270 and the pixel electrode 191.

The liquid crystal layer 3 includes a plurality of liquid crystalmolecules 31, and an arrangement direction of the liquid crystalmolecules 31 is controlled by an electric field between the pixelelectrode 191 and the common electrode 270. According to the arrangementof the liquid crystal molecules, transmittance of light received fromthe light assembly 500 may be controlled to display an image.

The above-described display device provides further improved (e.g.,increased) color reproducibility and contrast ratio through the colorconversion panel.

Next, the display device according to an exemplary embodiment of thepresent invention will be described with reference to FIG. 5 and FIG. 6.FIG. 5 is a top plan view of one pixel of a display device according toan exemplary embodiment of the present invention; and FIG. 6 is across-sectional view taken along the line VI-VI of FIG. 5.

The display device according to an exemplary embodiment of the presentinvention includes the color conversion panel 30, the display panel 10,and the light assembly 500. The display panel 10 may be positioned onthe light assembly 500, and the color conversion panel 30 may bepositioned on the display panel 10.

The color conversion panel 30 and the light assembly 500 included in thedisplay device according to an exemplary embodiment of the presentinvention are the same or substantially the same as in theabove-described exemplary embodiment, thus, the description thereof isnot repeated. However, to dispose the substrate 310 included in thecolor conversion panel 30 to be far away from the display panel 10, thecolor conversion panel 30 may be positioned. For example, the colorconversion panel 30 is reversed on the display panel 10 such that thesubstrate 310 may be disposed in the top.

The display panel 10 may include a liquid crystal panel 50 fordisplaying an image, and polarizers 12 and 22 positioned on respectivesurfaces of the liquid crystal panel 50. A first polarizer 12 and asecond polarizer 22 for polarization of the light incident from thelight assembly 500 are positioned at respective surfaces of the liquidcrystal panel 50.

A gate line 121 is positioned on the substrate 110 in the liquid crystalpanel 50. The gate line 121 includes a gate electrode 124.

A gate insulating layer 140 is positioned on the substrate 110 and thegate line 121. On the gate insulating layer 140, a semiconductor layer154 is positioned under a data line 171 and source/drain electrodes 173and 175 and on a channel part of the thin film transistor Q.

On each semiconductor layer 151 and 154 and the gate insulating layer140, a data conductor (171, 173, and 175) including the source electrode173, the data line 171 connected to the source electrode 173, and thedrain electrode 175 is positioned.

The gate electrode 124, the source electrode 173, and the drainelectrode 175 form the thin film transistor Q along the semiconductorlayer 154, and the channel of the thin film transistor Q is formed inthe semiconductor layer 154 between the source electrode 173 and thedrain electrode 175.

A first passivation layer 180 may be positioned on the data conductor(171, 173, and 175) and the exposed semiconductor layer 154. A lightblocking member 220 and a second passivation layer 240 are positioned onthe first passivation layer 180.

The light blocking member 220 is formed in a lattice structure having anopening corresponding to a region for displaying an image, and is madeof an opaque material (e.g., a material through which light is nottransmitted).

The first and second passivation layers 180 and 240 and the lightblocking member 220 have a contact hole 185 that exposes the drainelectrode 175.

A pixel electrode 191 is positioned on the second passivation layer 240.The pixel electrode 191 includes a protrusion 197 extending toward thegate line 121 from the pixel electrode 191, and the protrusion 197 isphysically and electrically connected to the drain electrode 175 throughthe contact hole 185, thereby receiving a data voltage from the drainelectrode 175.

The thin film transistor Q and the pixel electrode 191 described aboveare only described as examples, and the structure of the thin filmtransistor and design of the pixel electrode are not limited to thestructure described in the present exemplary embodiment, and may bemodified to be applied based on the description according to anexemplary embodiment of the present invention.

A lower alignment layer 11 is positioned on the pixel electrode 191, andthe lower alignment layer 11 may be a vertical alignment layer. An upperalignment layer 21 is positioned to face the lower alignment layer 11,and a microcavity 305 is positioned between the lower alignment layer 11and the upper alignment layer 21.

In the present exemplary embodiment, the lower alignment layer 11 andthe upper alignment layer 21 are distinguished from each other based ontheir positions (and may otherwise be the same or substantially thesame), and may be connected to each other, as shown in FIG. 6. The loweralignment layer 11 and the upper alignment layer 21 may be concurrentlyor simultaneously formed.

The microcavity 305 is injected with the liquid crystal molecules 31 toform the liquid crystal layer 3. A liquid crystal inlet 307FP is formedon a portion where the thin film transistor Q is positioned, and theliquid crystal inlet 307FP may be covered by an overcoat 390. Themicrocavity 305 is partitioned in a Y-axis direction by a plurality ofliquid crystal inlets 307FP positioned at portions overlapped with thegate line 121, so as to form the plurality of microcavities 305. Inaddition, the microcavity 305 is partitioned in an X-axis direction by apartition wall part PWP to be described below, so as to form theplurality of microcavities 305. Each of the plurality of formedmicrocavities 305 may correspond to one, two, or more pixel regions, andthe pixel region may correspond to a region displaying a screen.

A common electrode 270 is positioned on the upper alignment layer 21.The common electrode 270 receives a common voltage and generates anelectric field together with the pixel electrode 191, to which the datavoltage is applied, to determine a direction in which the liquid crystalmolecules 31 positioned at the microcavities 305 between the twoelectrodes are inclined. In the present exemplary embodiment, the commonelectrode 270 is positioned on the microcavities 305, however, thecommon electrode 270 may alternatively be positioned under themicrocavities 305 as another exemplary embodiment to realize the liquidcrystal driving according to a coplanar electrode (CE) mode.

A roof layer 360 is positioned on the lower insulating layer 350. Theroof layer 360 serves as a support so that the microcavity 305, which isa space between the pixel electrode 191 and the common electrode 270, isformed.

In the present exemplary embodiment, the partition wall part PWP ispositioned between the microcavities 305 adjacent in the X-axisdirection. The partition wall part PWP may be formed along the Y-axisdirection as the direction in which the data line 171 extends and may becovered by the roof layer 360. The partition wall part PWP is filledwith the common electrode 270 and the roof layer 360, and themicrocavities 305 may be divided or defined as this structure forms apartition wall.

An overcoat 390 is positioned on the roof layer 360. In the presentexemplary embodiment, the overcoat 390 may be positioned in the liquidcrystal inlet 307FP as well as on an upper insulating layer. In thiscase, the overcoat 390 may cover the liquid crystal inlet 307FP.

The display device according to an exemplary embodiment of the presentinvention is improved in terms of contrast ratio and colorreproducibility, thereby providing a display device with excellentdisplay quality, and one sheet substrate is used, thereby simplifyingthe manufacturing process and the structure.

The display device according to an exemplary embodiment of the presentinvention will now be described with reference to FIG. 7. FIG. 7 is across-sectional view of a display device according to an exemplaryembodiment of the present invention.

The display device according to an exemplary embodiment of the presentinvention shown in FIG. 7 includes a thin film transistor panel 10′, acolor conversion panel 30′, and a light assembly 500. The light assembly500 is the same or substantially the same as the above-describedconstituent element, thus, a description thereof is not repeated.

The display device according to an exemplary embodiment of the presentinvention includes the thin film transistor panel 10′, the colorconversion panel 30′ facing and separated from the thin film transistorpanel 10′, and a liquid crystal layer 3 positioned between the thin filmtransistor panel 10′ and the color conversion panel 30′ and includingthe liquid crystal molecules.

The display device according to the present specification may furtherinclude the first polarizer 12 and the second polarizer 22 respectivelypositioned on one surface of the thin film transistor panel 10′ and thecolor conversion panel 30′. According to an exemplary embodiment, thesecond polarizer 22 may be positioned on one surface of the colorconversion panel 30′ facing toward the thin film transistor panel 10′.For example, the second polarizer 22 may be an in-cell polarizer.

The thin film transistor panel 10′ according to the present exemplaryembodiment is the same or substantially the same as the lower panel 100of FIG. 4 and the color conversion panel 30′ is similar to the colorconversion panel 30 of FIG. 1, such that, in the relevant description,FIG. 1, FIG. 3, and FIG. 4 may be referred to as well as FIG. 7.

First, a plurality of pixel electrodes are positioned in a matrix shapeon the first substrate 110 included in the thin film transistor panel10′.

A gate line 121 extending in a row direction and including a gateelectrode 124; a gate insulating layer 140 positioned on the gate line121; a semiconductor layer 154 positioned on the gate insulating layer140, a data line 171 positioned on the semiconductor layer 154,extending in a column direction, and including a source electrode 173; adrain electrode 175; a passivation layer 180 positioned on the data line171 and the drain electrode 175; and a pixel electrode 191 electricallyand physically connected to the drain electrode 175 through a contacthole 185 are positioned on the first substrate 110.

The semiconductor layer 154 positioned on the gate electrode 124 forms achannel layer in the region that is exposed by the source electrode 173and the drain electrode 175, and the gate electrode 124, thesemiconductor layer 154, the source electrode 173, and the drainelectrode 175 form one thin film transistor.

Next, the second substrate 210 faces the first insulation substrate 110to be separated therefrom. The plurality of color conversion layers 330Rand 330G and the transmission layer 330B, and the light blocking member320 positioned between the plurality of color conversion layers 330R and330G and the transmission layer 330B, are positioned between thesubstrate 310 and the liquid crystal layer 3. In detail, the pluralityof color conversion layers 330R and 330G, the transmission layer 330B,and the light blocking member 320 are positioned on one surface of thesubstrate 310 facing toward the first substrate 110.

The light blocking member 320 defines a region where the red colorconversion layer 330R, the green color conversion layer 330G, and thetransmission layer 330B are disposed. The red color conversion layer330R, the green color conversion layer 330G, and the transmission layer330B are positioned between the light blocking members 320.

The red color conversion layer 330R may convert blue light supplied fromthe light assembly 500 into red, and the green color conversion layer330G may convert blue light supplied from the light assembly 500 intogreen. For this, the red color conversion layer 330R and the green colorconversion layer 330G may include at least one of the phosphor and thequantum dots.

The transmission layer 330B is made of the transparent polymer andtransmits the blue light supplied from the light assembly 500, therebyrepresenting the color blue. For example, the transmission layer 330Bcorresponding to the region emitting the blue light may include amaterial (e.g., a polymer, such as a photosensitive resin) emitting theincident blue light as it is without the additional phosphors (orphosphor layer) or the quantum dots.

Next, the capping layer 340 is positioned on one surface of theplurality of color conversion layers 330R and 330G, the transmissionlayer 330B, and the light blocking member 320 facing toward the firstsubstrate 110. The capping layer 340 prevents or substantially preventsthe color conversion layers 330R and 330G from being damaged by afollowing process after forming the capping layer 340. In detail, in aprocess after forming the color conversion layers 330R and 330G, thephosphors (or phosphor layer) and the quantum dots included in the colorconversion layers 330R and 330G and the transmission layer 330B may bedamaged and extinguished by the moisture and the high temperature,however the damage and the extinction are prevented or substantiallyprevented through the capping layer 340 according to an exemplaryembodiment of the present invention.

In this case, the capping layer 340 may be formed at less than 100° C.Compared with the capping layer deposited at a high temperature, thecapping layer 340 according to an exemplary embodiment of the presentinvention deposited at a low temperature may prevent or substantiallyprevent the degradation of the color conversion layer.

To protect the color conversion layers 330R and 330G and thetransmission layer 330B, the capping layer 340 may be deposited to coverone exposed surface of the color conversion layers 330R and 330G and thetransmission layer 330B. In detail, the capping layer 340 may cover onesurface and each lateral surface of the plurality of color conversionlayers 330R and 330G and the transmission layer 330B facing toward thefirst substrate 110.

The capping layer 340 may be the inorganic material, and as one example,a silicon nitride (SiN_(x)). However, it is not limited to the material,and the capping layer may use any suitable material that isnon-oxidizing and transparent.

The thickness of the capping layer 340 may be less than 1 μm, in orderto protect the plurality of color conversion layers from the hightemperature or the moisture.

The filter layer 350 is positioned on one surface of the capping layer340 facing toward the first substrate 110. In the present specification,the capping layer 340 and the filter layer 350 are positioned on onesurface of the light blocking member 320 facing toward the firstsubstrate 110; however, embodiments of the present invention are notlimited thereto, and the capping layer 340 and the filter layer 350 maybe positioned on one surface of the color conversion layers 330R and330G and the transmission layer 330B facing toward first substrate 110,and the light blocking member may be positioned on one surface of thefilter layer 350 facing toward the first substrate 110, or the lightblocking member may be positioned on one surface of the capping layer340 facing toward the first substrate 110 and the filter layer may bepositioned on one surface of the capping layer and the light blockingmember facing toward the first substrate 110 as another exemplaryembodiment.

The filter layer 350 again directs the light emitted in the directionopposite to the direction incident on the user to the color conversionlayers 330R and 330G and the transmission layer 330B while the light isemitted or transmitted in the color conversion layers 330R and 330G andthe transmission layer 330B, thereby improving (e.g., increasing) lightemission efficiency. In some exemplary embodiments, the filter layer 350may be omitted.

Next, the planarization layer 370 is positioned on one surface of thefilter layer 350 facing toward the first substrate 110. Theplanarization layer 370 may provide the flat surface, and the commonelectrode 270 is positioned on one surface of the planarization layer370 facing toward the first substrate 110. The planarization layer 370may be omitted in some exemplary embodiments.

The common electrode 270 applied with the common voltage forms theelectric field with the pixel electrode 191 to arrange the liquidcrystal molecules 31 positioned in the liquid crystal layer 3.

The liquid crystal layer 3 includes the plurality of liquid crystalmolecules 31, and the arrangement direction of the liquid crystalmolecules 31 is controlled by the electric field between the pixelelectrode 191 and the common electrode 270. The transmittance of thelight transmitted from the light assembly 500 is controlled depending onthe arrangement of the liquid crystal molecules, thereby displaying theimage.

The above-described display device according to an exemplary embodimentof the present invention does not include the upper panel 200 shown inFIG. 4, and the color conversion panel 30′ replaces the function and theposition of the upper panel. This display device may be provided with athinner thickness and the cost and the weight thereof may be reduced.

The display device according to an exemplary embodiment of the presentinvention will be described with reference to FIG. 8 and FIG. 9. FIG. 8is a top plan view of a plurality of pixels in an organic light emittingdiode display according to an exemplary embodiment of the presentinvention; and FIG. 9 is a cross-sectional view taken along the lineIX-IX of FIG. 8.

The display device shown in FIG. 8 and FIG. 9 includes the display panel10 and the color conversion panel 30 positioned on the display panel 10.The color conversion panel 30 of FIG. 8 and FIG. 9 is the same orsubstantially the same as the above-described color conversion panel 30according to the exemplary embodiment of FIG. 1, thus, the descriptionthereof is not repeated.

In the display panel 10, a gate conductor having a gate line 121including a first gate electrode 124 a and a second gate electrode 124 bis positioned on the first substrate 110.

The gate line 121 transmits the gate signal. The first gate electrode124 a extends upward from the gate line 121, and the second gateelectrode 124 b is separated from the gate line 121 and includes astorage electrode 127.

A gate insulating layer 140 is located on the gate conductor (121, 124a, 124 b, and 127).

First and second semiconductor layers 154 a and 154 b made ofhydrogenated amorphous silicon or polysilicon are located on the gateinsulating layer 140. The first and second semiconductor layers 154 aand 154 b are respectively positioned on the first and second gateelectrodes 124 a and 124 b.

A plurality of pairs of ohmic contacts 163 and 165 are positioned on thefirst and second semiconductor layers 154 a and 154 b.

A plurality of data conductors including a data line 171, a drivingvoltage line 172, and first and second drain electrodes 175 a and 175 bare formed on the ohmic contacts 163 and 165 and the gate insulatinglayer 140.

The data line 171 and the driving voltage line 172 mainly extend in thelongitudinal direction, thereby crossing the gate line 121. The dataline 171 includes a plurality of first source electrodes 173 a extendingtoward the first gate electrode 124 a, and the driving voltage line 172includes a second source electrode 173 b extending toward the secondgate electrode 124 b.

The first and second drain electrodes 175 a and 175 b are separated fromeach other and are also separated from the data line 171 and the drivingvoltage line 172. The first source electrode 173 a and the first drainelectrode 175 a face each other via the first gate electrode 124 a, andthe second source electrode 173 b and the second drain electrode 175 bface each other via the second gate electrode 124 b.

The semiconductor layers 154 a and 154 b include parts exposed betweenthe source electrodes 173 a and 173 b and the drain electrodes 175 a and175 b.

A passivation layer 180 is positioned on the data conductors 171, 172,173 a, 173 b, 175 a, and 175 b and the exposed parts of thesemiconductor layers 154 a and 154 b.

The passivation layer 180 has contact holes 185 a and 185 b respectivelyexposing the first and second drain electrodes 175 a and 175 b. Thepassivation layer 180 and the gate insulating layer 140 have a contacthole 184 formed therethrough that exposes the second gate electrode 124b.

A pixel electrode 191 and a connecting member 85 are positioned on thepassivation layer 180.

The pixel electrode 191 is physically and electrically connected to thesecond drain electrode 175 b through the contact hole 185 b, and theconnecting member 85 is connected to the second gate electrode 124 b andthe first drain electrode 175 a through the contact holes 184 and 185 a.

A partition 361 is positioned on the passivation layer 180. Thepartition 361 encloses the edge of the pixel electrode 191 like a bank,thereby defining an opening 365, and is made of the organic insulator orthe inorganic insulator. The partition 361 may be made of a photoresistincluding black pigments, and may function as a light blocking member inthis case, thereby simplifying the manufacturing process.

An organic light emitting member 470 is formed in openings 365 definedby the partition 361 on the pixel electrode 191. The organic lightemitting member 470 of the organic light emitting diode displayaccording to the present exemplary embodiment is only made of theorganic material emitting blue light. In the case of the organic lightemitting diode display according to the present exemplary embodiment,the color conversion panel 30 is positioned on the upper surface of theorganic light emitting diode display to represent each color of red,green, and blue such that only the organic material representing theblue light may be included.

A common electrode 270 is positioned on the organic light emittingmember 470. In the organic light emitting diode display, the first gateelectrode 124 a connected to the gate line 121, the first sourceelectrode 173 a connected to the data line 171, and the first drainelectrode 175 a form a switching thin film transistor Qs along with thefirst semiconductor layer 154 a, and the channel of the switching thinfilm transistor Qs is formed in the first semiconductor layer 154 abetween the first source electrode 173 a and the first drain electrode175 a. The second gate electrode 124 b connected to the first drainelectrode 175 a, the second source electrode 173 b connected to thedriving voltage line 172, and the second drain electrode 175 b connectedto the pixel electrode 191 form a driving thin film transistor Qd alongwith the second semiconductor layer 154 b, and the channel of thedriving thin film transistor Qd is formed in the second semiconductorlayer 154 b between the second source electrode 173 b and the seconddrain electrode 175 b. The pixel electrode 191, the organic lightemitting member 470, and the common electrode 270 form the organic lightemitting diode, and the pixel electrode 191 becomes the anode and thecommon electrode 270 becomes the cathode. However, in another example,the pixel electrode 191 may become the cathode and the common electrode270 may become the anode. The storage electrode 127 and the drivingvoltage line 172 overlap with each other, thereby forming the storagecapacitor Cst.

In the color conversion panel 30 according to an exemplary embodiment ofthe present invention, the substrate 310 of the color conversion panel30 faces the first substrate 110, and the color conversion layers 330Rand 330G, the transmission layer 330B, the light blocking member 320,the capping layer 340, and the filter layer 350 are disposed to bepositioned on one surface of the first substrate 110 facing toward thesubstrate 310.

The organic light emitting diode display according to an exemplaryembodiment of the present invention is improved in terms of lightemission efficiency and color reproducibility, thereby providingexcellent display quality.

Next, an exemplary embodiment of the present invention and a comparativeexample will be described with reference to FIG. 10. FIG. 10 is a graphcomparing degradation over operating lifetime of an exemplary embodimentof the present invention and a comparative example, by comparing lightamounts (e.g., light emission efficiencies) as a function of time.

Referring to FIG. 10, it may be confirmed that the color conversionpanel including the capping layer on the color conversion layersaccording to the exemplary embodiment substantially maintains the lightamount even when a long time has elapsed. In contrast, when the separatecapping layer is omitted on the color conversion layers according to thecomparative example, only about 50% of the initial light amount isemitted when 200 h (hours) have elapsed.

Also, as shown in Table 1, in an exemplary embodiment of the presentinvention, the light emission efficiency represents about 200% ascompared with the comparative example, and referring to a result of FIG.10, even if the 200 h have elapsed, it may be confirmed that the lightamount of about 90% is maintained compared with the beginning.

TABLE 1 Exemplary Comparative Example Embodiment Light EmissionEfficiency 100% 200% Reliability 50% 90%

Accordingly, the color conversion panel according to an exemplaryembodiment of the present invention may provide further improved (e.g.,increased) light emission efficiency and display quality.

It will be understood that, although the terms “first”, “second”,“third”, etc., may be used herein to describe various elements,components, regions, layers and/or sections, these elements, components,regions, layers and/or sections should not be limited by these terms.These terms are used to distinguish one element, component, region,layer or section from another element, component, region, layer orsection. Thus, a first element, component, region, layer or sectiondiscussed below could be termed a second element, component, region,layer or section, without departing from the spirit and scope of theinventive concept.

Spatially relative terms, such as “beneath”, “below”, “lower”, “under”,“above”, “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. It will beunderstood that the spatially relative terms are intended to encompassdifferent orientations of the device in use or in operation, in additionto the orientation depicted in the figures. For example, if the devicein the figures is turned over, elements described as “below” or“beneath” or “under” other elements or features would then be oriented“above” the other elements or features. Thus, the example terms “below”and “under” can encompass both an orientation of above and below. Thedevice may be otherwise oriented (e.g., rotated 90 degrees or at otherorientations) and the spatially relative descriptors used herein shouldbe interpreted accordingly. In addition, it will also be understood thatwhen an element is referred to as being “between” two elements, it canbe the only element between the two elements, or one or more interveningelements may also be present.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting of the inventive concept.As used herein, the singular forms “a” and “an” are intended to includethe plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “include,”“including,” “comprises,” and/or “comprising,” when used in thisspecification, specify the presence of stated features, integers, steps,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof. As used herein,the term “and/or” includes any and all combinations of one or more ofthe associated listed items. Expressions such as “at least one of,” whenpreceding a list of elements, modify the entire list of elements and donot modify the individual elements of the list. Further, the use of“may” when describing embodiments of the inventive concept refers to“one or more embodiments of the inventive concept.” Also, the term“exemplary” is intended to refer to an example or illustration.

It will be understood that when an element or layer is referred to asbeing “on”, “connected to”, “coupled to”, or “adjacent” another elementor layer, it can be directly on, connected to, coupled to, or adjacentthe other element or layer, or one or more intervening elements orlayers may be present. When an element or layer is referred to as being“directly on,” “directly connected to”, “directly coupled to”, or“immediately adjacent” another element or layer, there are nointervening elements or layers present.

As used herein, the term “substantially,” “about,” and similar terms areused as terms of approximation and not as terms of degree, and areintended to account for the inherent variations in measured orcalculated values that would be recognized by those of ordinary skill inthe art.

As used herein, the terms “use,” “using,” and “used” may be consideredsynonymous with the terms “utilize,” “utilizing,” and “utilized,”respectively.

The display device and/or any other relevant devices or componentsaccording to embodiments of the present invention described herein, suchas the color conversion panel, may be implemented utilizing any suitablehardware, firmware (e.g. an application-specific integrated circuit),software, or a suitable combination of software, firmware, and hardware.For example, the various components of the display device may be formedon one integrated circuit (IC) chip or on separate IC chips. Further,the various components of the display device may be implemented on aflexible printed circuit film, a tape carrier package (TCP), a printedcircuit board (PCB), or formed on a same substrate. Further, the variouscomponents of the display device may be a process or thread, running onone or more processors, in one or more computing devices, executingcomputer program instructions and interacting with other systemcomponents for performing the various functionalities described herein.The computer program instructions are stored in a memory which may beimplemented in a computing device using a standard memory device, suchas, for example, a random access memory (RAM). The computer programinstructions may also be stored in other non-transitory computerreadable media such as, for example, a CD-ROM, flash drive, or the like.Also, a person of skill in the art should recognize that thefunctionality of various computing devices may be combined or integratedinto a single computing device, or the functionality of a particularcomputing device may be distributed across one or more other computingdevices without departing from the scope of the exemplary embodiments ofthe present invention.

While this invention has been described in connection with what ispresently considered to be practical exemplary embodiments, it is to beunderstood that the invention is not limited to the disclosedembodiments, and is intended to cover various suitable modifications andequivalent arrangements included within the spirit and scope of thepresent invention as defined by appended claims and equivalents thereof.

<Description of some of symbols>  10: display panel 12, 22: polarizer 30: color conversion panel 310: substrate  11: first alignment layer 21: second alignment layer 110: first substrate 121: gate line

What is claimed is:
 1. A color conversion panel comprising: a substrate;a plurality of color conversion layers and a transmission layer on thesubstrate; a capping layer on the plurality of color conversion layersand the transmission layer; and a filter layer on the capping layer,wherein the capping layer comprises an inorganic material and theinorganic material comprises a non-oxidizing material.
 2. The colorconversion panel of claim 1, wherein the capping layer covers each uppersurface and each lateral surface of the plurality of color conversionlayers and the transmission layer.
 3. The color conversion panel ofclaim 1, further comprising a light blocking member between adjacentlayers of the plurality of color conversion layers and the transmissionlayer.
 4. The color conversion panel of claim 1, wherein the cappinglayer comprises a silicon nitride (SiN_(x)).
 5. The color conversionpanel of claim 1, wherein a thickness of the capping layer is less thanabout 1 μm.
 6. The color conversion panel of claim 1, wherein thecapping layer is formed below about 100° C.
 7. A display devicecomprising: a display panel; and a color conversion panel on the displaypanel, wherein the color conversion panel comprises: a substrate, aplurality of color conversion layers and a transmission layer on onesurface of the substrate facing toward the display panel, a cappinglayer on one surface of the plurality of color conversion layers and thetransmission layer facing toward the display panel, and a filter layerbetween the capping layer and the display panel, wherein the cappinglayer comprises an inorganic material and the inorganic materialcomprises a non-oxidizing material.
 8. The display device of claim 7,wherein the capping layer covers each upper surface and each lateralsurface of the plurality of color conversion layers and the transmissionlayer.
 9. The display device of claim 7, further comprising a lightblocking member between adjacent layers among the plurality of colorconversion layers and the transmission layer.
 10. The display device ofclaim 7, wherein the capping layer comprises a silicon nitride(SiN_(x)).
 11. The display device of claim 7, wherein a thickness of thecapping layer is less than about 1 μm.